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Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Release Time:2019-04-14
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Institution:
物理学院
Title of Paper:
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Journal:
Applied physics letters
First Author:
林兆军
All the Authors:
Meng lingguo
Document Code:
lw-96689
Volume:
98
Issue:
12
Page Number:
123512-1
Translation or Not:
No
Date of Publication:
2011-03
Release Time:
2019-04-14