Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
Release Time:2019-04-14
Hits:
- Institution:
- 物理学院
- Title of Paper:
- Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
- Journal:
- Applied physics letters
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo
- Document Code:
- lw-96700
- Volume:
- 99
- Issue:
- 12
- Page Number:
- 123504
- Translation or Not:
- No
- Date of Publication:
- 2011-09
- Release Time:
- 2019-04-14