Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures
Release time:2019-04-14
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- Affiliation of Author(s):
- 物理学院
- Journal:
- Journal of Semiconductors
- All the Authors:
- Meng lingguo
- First Author:
- linzhaojun
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- lw-96784
- Volume:
- 31
- Issue:
- 8
- Page Number:
- 084007-1
- Translation or Not:
- no
- Date of Publication:
- 2010-08-30