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Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-22
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Affiliation of Author(s):
物理学院
Journal:
Applied physics letters
All the Authors:
Meng lingguo
First Author:
linzhaojun
Indexed by:
Unit Twenty Basic Research
Document Code:
lw-96689
Volume:
98
Issue:
12
Page Number:
123512-1
Translation or Not:
no
Date of Publication:
2011-03-25