Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Release Time:2019-10-22
Hits:
- Institution:
- 物理学院
- Title of Paper:
- Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
- Journal:
- Journal of applied physics
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo
- Document Code:
- lw-96709
- Volume:
- 109
- Issue:
- 7
- Page Number:
- 074512-1
- Translation or Not:
- No
- Date of Publication:
- 2011-04
- Release Time:
- 2019-10-22