Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
Release time:2019-10-22
Hits:
- Affiliation of Author(s):
- 物理学院
- Journal:
- Applied physics letters
- All the Authors:
- Meng lingguo
- First Author:
- linzhaojun
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- lw-96700
- Volume:
- 99
- Issue:
- 12
- Page Number:
- 123504
- Translation or Not:
- no
- Date of Publication:
- 2011-09-22