Wenxiang Mu
Associate Professor
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High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact
  • Affiliation of Author(s):
    微电子学院
  • Journal:
    IEEE Electron Device Letters
  • All the Authors:
    Xutang Tao,Song A M,xinqian,xumingsheng,Wenxiang Mu,Wang Xinyu,xingongming,Zhitai Jia
  • First Author:
    杜路路
  • Indexed by:
    Unit Twenty Basic Research
  • Document Code:
    95E46522A7424B49812ABB6DBA13307C
  • Volume:
    40
  • Issue:
    3
  • Page Number:
    451
  • Translation or Not:
    no
  • Date of Publication:
    2019-03-01

Pre One:Investigation of Y2.1Er0.9(ScxGa1-x)(5)O-12 Matrix Components on the Spectral Properties around 3.0 mu m by Micro-Pulling-Down Method

Next One:Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on beta-Ga2O3 Single Crystals

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