Wenxiang Mu
Associate Professor
Visit:次
Paper Publications
Home
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Title of Paper:
    A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
  • Journal:
    Journal of Semiconductors
  • First Author:
    付博
  • All the Authors:
    Wenxiang Mu,尹延如,张健,Xutang Tao,Zhitai Jia
  • Document Code:
    8731C0AB390E416686F784839D156A8B
  • Number of Words:
    4000
  • Translation or Not:
    No
  • Date of Publication:
    2019-04
  • Release Time:
    2019-10-25
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University