Wenxiang Mu
Associate Professor
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Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method
  • Affiliation of Author(s):
    晶体材料研究院
  • Journal:
    CrystEngComm
  • First Author:
    付博
  • Document Code:
    55C24D7F45A949C9A5B51458C58A86D0
  • Issue:
    3
  • Number of Words:
    3500
  • Translation or Not:
    no
  • Date of Publication:
    2021-04-06

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