Wenxiang Mu
Associate Professor
Visit:次
Paper Publications
Home
Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method
  • Affiliation of Author(s):
    晶体材料研究院
  • Journal:
    CrystEngComm
  • First Author:
    付博
  • Indexed by:
    Unit Twenty Basic Research
  • Document Code:
    55C24D7F45A949C9A5B51458C58A86D0
  • Issue:
    3
  • Translation or Not:
    no
  • Date of Publication:
    2021-04-06

Pre One:Investigation of the blue color center in β-Ga2O3 crystals by the EFG method

Next One:New near-infrared optical modulator of Co2+:β-Ga2O3 single crystal

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University