Wenxiang Mu
Associate Professor
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Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG？method
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG？method
  • Journal:
    CrystEngComm
  • First Author:
    付博
  • Document Code:
    766AF9282F384820996C8A3EE9BD2FF4
  • Issue:
    23
  • Page Number:
    8360
  • Number of Words:
    6
  • Translation or Not:
    No
  • Date of Publication:
    2021-10
  • Release Time:
    2023-10-30
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