Wenxiang Mu
Associate Professor
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Paper Publications
Rapid epitaxy of 2-inch and high-quality alpha-Ga2O3 films by mist-CVD method
  • Affiliation of Author(s):
    晶体材料研究院
  • Journal:
    Journal of Semiconductors
  • First Author:
    Wang, Xiaojie
  • Document Code:
    1678970499690606594
  • Volume:
    44
  • Issue:
    6
  • Number of Words:
    4000
  • Translation or Not:
    no
  • Date of Publication:
    2023-06-01

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Next One:Solar-blind photodetectors prepared using semi-insulating Co:β-Ga2O3 single crystals that are stable over a wide temperature range

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