Wenxiang Mu
Associate Professor
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Paper Publications
Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals
  • Journal:
    Science China Materials
  • Indexed by:
    Journal paper
  • Translation or Not:
    no
  • Date of Publication:
    2025-06-01

Pre One:Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga2O3

Next One:Optimization of oxygen flow rate toward high-quality ε-Ga2O3 thin films grown on sapphire substrates and solar-blind ultraviolet photodetectors

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