Wenxiang Mu
Associate Professor
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Dopant Segregation at the Solid-Liquid Interface in the Single Crystal Growth of β-Ga2O3 by an Edge-Defined Film-Fed Growth Method
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Dopant Segregation at the Solid-Liquid Interface in the Single Crystal Growth of β-Ga2O3 by an Edge-Defined Film-Fed Growth Method
  • Journal:
    CRYSTAL GROWTH & DESIGN
  • First Author:
    张晋
  • Document Code:
    1878995110274146306
  • Number of Words:
    4000
  • Translation or Not:
    No
  • Date of Publication:
    2024-12
  • Release Time:
    2025-09-13
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