Wenxiang Mu
Associate Professor
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Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals
  • Journal:
    SCIENCE CHINA-MATERIALS
  • Document Code:
    1934541961818955777
  • Number of Words:
    2000
  • Translation or Not:
    No
  • Date of Publication:
    2025-06
  • Release Time:
    2025-09-13
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