Wenxiang Mu
Associate Professor
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Improving the quality of MOCVD-Grown α-Ga2O3 by introducing an AGO buffer on m-plane sapphire
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Improving the quality of MOCVD-Grown α-Ga2O3 by introducing an AGO buffer on m-plane sapphire
  • Journal:
    VACUUM
  • First Author:
    Li, Zhucheng
  • Document Code:
    1945404935660003330
  • Volume:
    240
  • Number of Words:
    2000
  • Translation or Not:
    No
  • Date of Publication:
    2025-10
  • Release Time:
    2025-09-26
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