Wenxiang Mu
Associate Professor
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一种垂直结构宽带近红外LED及制备方法
  • Title:
    一种垂直结构宽带近红外LED及制备方法
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Type of Patent:
    Invent
  • Application Number:
    202010601278.X
  • Number of Inventors:
    4
  • Service Invention or Not:
    No
  • Publication Date:
    2021-11-12
  • Authorization Date:
    2021-11-12
  • Release Time:
    2021-11-17
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