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Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

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  • Affiliation of Author(s):晶体材料研究所

  • Journal:CrystEngComm

  • All the Authors:chenxiufang,pengyan,huxiaobo,xuxiangang

  • First Author:yangxianglong

  • Indexed by:Unit Twenty Basic Research

  • Document Code:2557E73BC3D44D8EA03DE3BD5B5DA01A

  • Volume:20

  • Issue:12

  • Page Number:1705

  • Translation or Not:no

  • Date of Publication:2018-03-28

  • Date of Publication:2018-03-28
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