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    Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

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    • Institution:晶体材料研究所

    • Title of Paper:Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

    • Journal:CrystEngComm

    • First Author:杨祥龙

    • All the Authors:陈秀芳,彭燕,胡小波,徐现刚

    • Document Code:2557E73BC3D44D8EA03DE3BD5B5DA01A

    • Volume:20

    • Issue:12

    • Page Number:1705

    • Translation or Not:No

    • Date of Publication:2018-03

    • Release Time:2019-04-14
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