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    半绝缘碳化硅单晶衬底的研究进展

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    • Institution:新一代半导体材料研究院

    • Title of Paper:半绝缘碳化硅单晶衬底的研究进展

    • Journal:《人工晶体学报》

    • First Author:彭燕

    • Document Code:2972EA3926F94F58B5F281E2AAF0DAF2

    • Issue:4

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2021-03

    • Release Time:2021-10-09
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