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Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CRYSTENGCOMM

  • First Author:彭燕

  • Indexed by:Unit Twenty Basic Research

  • Document Code:E3FC00366F23467F925689374D888D93

  • Issue:23

  • Number of Words:3000

  • Translation or Not:no

  • Date of Publication:2020-10-12

  • Date of Publication:2020-10-12
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