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    Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

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    • Institution:晶体材料研究院

    • Title of Paper:Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

    • Journal:CrystEng Comm

    • First Author:于金英

    • Document Code:C8AAD6E1796B4EB4B2D502DEF34AFBEF

    • Volume:23

    • Issue:2

    • Page Number:353

    • Number of Words:3500

    • Translation or Not:No

    • Date of Publication:2021-01

    • Release Time:2021-10-20
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