中文

Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:CrystEng Comm

  • First Author:于金英

  • Indexed by:Unit Twenty Basic Research

  • Document Code:C8AAD6E1796B4EB4B2D502DEF34AFBEF

  • Volume:23

  • Issue:2

  • Page Number:353

  • Number of Words:3500

  • Translation or Not:no

  • Date of Publication:2021-01-14

  • Date of Publication:2021-01-14

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