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Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:Materials Science Forum

  • First Author:胡小波

  • Document Code:57A464475826494993222F4DE6B7475D

  • Issue:821

  • Number of Words:3000

  • Translation or Not:no

  • Date of Publication:2015-08-05

  • Date of Publication:2015-08-05
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