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Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CrystEngComm

  • First Author:于金英

  • Document Code:1523586492268548098

  • Volume:24

  • Issue:8

  • Page Number:1582-1589

  • Number of Words:4000

  • Translation or Not:no

  • Date of Publication:2022-02-28

  • Date of Publication:2022-02-28
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