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Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:CrystEng Comm

  • First Author:仲光磊

  • Document Code:25FCCCAEF2E040C2B6642D5F6FCDC3EA

  • Issue:44

  • Page Number:7690

  • Number of Words:5000

  • Translation or Not:no

  • Date of Publication:2022-10-04

  • Date of Publication:2022-10-04
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