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Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:VACUUM

  • First Author:胡国杰

  • Document Code:1754450207846453250

  • Volume:222

  • Number of Words:3000

  • Translation or Not:no

  • Date of Publication:2024-04-01

  • Date of Publication:2024-04-01
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