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    一种高均匀性、高产率半绝缘碳化硅衬底的制备方法

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    • Title:一种高均匀性、高产率半绝缘碳化硅衬底的制备方法

    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Type of Patent:Invent

    • Application Number:201310683603.1

    • Number of Inventors:1

    • Service Invention or Not:No

    • Application Date:2013-12-13

    • Publication Date:2016-03-30

    • Authorization Date:2016-03-30

    • Release Time:2019-04-15
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