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一种高均匀性、高产率半绝缘碳化硅衬底的制备方法

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:pengyan

  • Type of Patent:发明

  • Application Number:201310683603.1

  • Number of Inventors:1

  • Service Invention or Not:no

  • Application Date:2013-12-13

  • Publication Date:2016-03-30

  • Authorization Date:2016-03-30

  • Publication Date:2016-03-30

  • Application Date:2013-12-13

  • Authorization Date:2016-03-30
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