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一种提高4H-SiC单晶晶型稳定性的方法

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:xuxiangang,huxiaobo,wanglihuan,pengyan

  • Type of Patent:发明

  • Application Number:201110186297.1

  • Number of Inventors:4

  • Service Invention or Not:no

  • Application Date:2011-07-05

  • Publication Date:2013-11-06

  • Authorization Date:2013-11-06

  • Publication Date:2013-11-06

  • Application Date:2011-07-05

  • Authorization Date:2013-11-06
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