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一种用于生长接近平衡态SiC单晶的坩埚

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:huxiaobo,xuxiangang,chenxiufang,yangxianglong,pengyan

  • Type of Patent:实用新型

  • Application Number:201821240513X

  • Number of Inventors:5

  • Service Invention or Not:no

  • Application Date:2018-08-02

  • Application Date:2018-08-02
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