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一种低氮含量SiC单晶生长装置

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:huxiaobo,xuxiangang,chenxiufang,yangxianglong,pengyan

  • Type of Patent:实用新型

  • Application Number:2018213805182

  • Number of Inventors:5

  • Service Invention or Not:no

  • Application Date:2018-08-27

  • Publication Date:2019-04-09

  • Authorization Date:2019-04-09

  • Publication Date:2019-04-09

  • Application Date:2018-08-27

  • Authorization Date:2019-04-09
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