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一种SiC单晶衬底及其制备方法与应用

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  • Affilication of Author(s):新一代半导体材料研究院

  • Type of Patent:发明

  • Application Number:202210119968.0

  • Number of Inventors:7

  • Service Invention or Not:no

  • Application Date:2022-01-28

  • Publication Date:2023-02-28

  • Authorization Date:2023-02-28

  • Publication Date:2023-02-28

  • Application Date:2022-01-28

  • Authorization Date:2023-02-28
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