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一种大直径SiC单晶生长装置及生长方法

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  • Affilication of Author(s):新一代半导体材料研究院

  • Type of Patent:发明

  • Application Number:202210227495.6

  • Number of Inventors:5

  • Service Invention or Not:no

  • Application Date:2022-03-08

  • Publication Date:2023-07-07

  • Authorization Date:2023-07-07

  • Publication Date:2023-07-07

  • Application Date:2022-03-08

  • Authorization Date:2023-07-07
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