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一种准本征半绝缘碳化硅单晶的制备方法

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  • Affilication of Author(s):新一代半导体材料研究院

  • Type of Patent:发明

  • Application Number:202111524463.4

  • Number of Inventors:6

  • Service Invention or Not:no

  • Application Date:2021-12-14

  • Publication Date:2023-06-13

  • Authorization Date:2023-06-13

  • Publication Date:2023-06-13

  • Application Date:2021-12-14

  • Authorization Date:2023-06-13
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