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    一种准本征半绝缘碳化硅单晶的制备方法

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    • Title:一种准本征半绝缘碳化硅单晶的制备方法

    • Institution:新一代半导体材料研究院

    • Type of Patent:Invent

    • Application Number:202111524463.4

    • Number of Inventors:6

    • Service Invention or Not:No

    • Application Date:2021-12-14

    • Publication Date:2023-06-13

    • Authorization Date:2023-06-13

    • Release Time:2023-09-27
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