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Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window” Adv. Electron. Mater. 2016, 2, 1500370.

Release time:2019-06-12|Hits:

Translation or Not:no

Included Journals:SCI

Pre One:
Kai Qian, Guofa Cai, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory”, ACS Appl. Mater. Interfaces 2016, 8, 27885.
Next One:
Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Novel Concepts in Functional Resistive Switching Memories”, J. Mater. Chem. C, 2016, 4, 9637.

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