The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.
Release Time:2024-09-09
Hits:
- Title of Paper:
- The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.
- Impact Factor:
- 6.8
- DOI Number:
- 10.1002/aelm.202300752
- Translation or Not:
- No
- Date of Publication:
- 2024-05
- Included Journals:
- SCI
- Links to Published Journals:
- https://doi.org/10.1002/aelm.202300752
- Release Time:
- 2024-09-09