Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage. Nano Letters 2023, 23, (13), 5927-5933.
Release Time:2024-09-09
Hits:
- Title of Paper:
- Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage. Nano Letters 2023, 23, (13), 5927-5933.
- Journal:
- Nano Letters
- Discipline:
- Natural Science
- Volume:
- 23
- Issue:
- 13
- Page Number:
- 5927-5933
- Impact Factor:
- 10.8
- Translation or Not:
- No
- Date of Publication:
- 2023-06
- Included Journals:
- SCI
- Release Time:
- 2024-09-09
- Prev One:The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.
- Next One:Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film. Applied Physics Letters 2022, 120 (25), 252403.

