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Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation

Release time:2019-10-25|Hits:

Affiliation of Author(s):晶体材料研究院

Journal:Journal of Materials Science-Materials in Electronics

All the Authors:chenxiufang,sunli,xuxiangang,zhaoxian

First Author:于璨璨

Document Code:A061422A352B46E38B06DCE79F8DD9CA

Volume: 28

Issue:4

Page Number:3884

Number of Words:3000

Translation or Not:no

Date of Publication:2017-02-01

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Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique
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Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method

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