Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique

Release time:2019-11-05|Hits:

Affiliation of Author(s):晶体材料研究院

Journal:SCRIPTA MATERIALIA

All the Authors:xiexuejian,sunli,chenxiufang,yangxianglong,huxiaobo,xuxiangang

First Author:xiexuejian

Document Code:BABA5D6C57944458BECE7F8B8DA366DC

Issue:76-80

Page Number:76

Number of Words:4

Translation or Not:no

Date of Publication:2019-04-06

Pre One:
Induced growth of quasi-free-standing graphene on SiC substrates
Next One:
Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation

   |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --