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Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
Release Time:2025-10-01
  • Institution:
    新一代半导体材料研究院
  • Journal:
    JOURNAL OF ALLOYS AND COMPOUNDS
  • First Author:
    王兴龙
  • Document Code:
    1945405047454982145
  • Volume:
    1036
  • Number of Words:
    3000
  • Translation or Not:
    No
  • Date of Publication:
    2025-06
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