Return Home
Patents
基于Cu2O介质层生长单层单晶石墨烯的方法
Release Time:2022-09-06
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Type of Patent:
    Invent
  • Application Number:
    202110808614.2
  • Number of Inventors:
    4
  • Service Invention or Not:
    No
  • Application Date:
    2021-07-16
  • Publication Date:
    2022-09-02
  • Authorization Date:
    2022-09-02
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University