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一种调控腔体压强制备高质量单晶畴二维材料的方法
Release Time:2022-09-15
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Type of Patent:
    Invent
  • Application Number:
    202111288448.4
  • Number of Inventors:
    4
  • Service Invention or Not:
    No
  • Application Date:
    2021-11-02
  • Publication Date:
    2022-08-30
  • Authorization Date:
    2022-08-30
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