王守志
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Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Title of Paper:
    Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
  • Journal:
    J. Mater. Chem. A.
  • First Author:
    吕松阳
  • Document Code:
    6A324EE074934A8B9C390E71EE25AEFC
  • Issue:
    41
  • Page Number:
    22007
  • Translation or Not:
    No
  • Date of Publication:
    2022-10
  • Release Time:
    2023-05-17
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