王守志
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Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
  • Title of Paper:
    Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
  • Journal:
    JOURNAL OF MATERIALS CHEMISTRY A
  • Volume:
    10
  • Issue:
    41
  • Page Number:
    22007-22015
  • Impact Factor:
    11.9
  • DOI Number:
    10.1039/d2ta04540k
  • ISSN:
    2050-7488
  • Translation or Not:
    No
  • Date of Publication:
    2022-09
  • Included Journals:
    SCI
  • Release Time:
    2023-07-12
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