王素梅山东大学主页平台管理系统--中文主页

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王素梅

职称：副教授
所在单位：材料科学与工程学院

教师拼音名称：wangsumei
入职时间：2010-10-22
所在单位：材料科学与工程学院
性别：女
在职信息：在职
是否在职：1

论文成果

[31] 王素梅. Low-temperature solution-processed alumina dielectric films for low-voltage organic thin film transistors. Journal of Materials Science Materials in Electronics, 2015.
[32] 王素梅. Fabrication and Performance of Pentacene Thin-film Transistors with SiO2/PMMA Bilayer Dielectric.. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012.
[33] 王素梅. Enhanced Luminescent Properties of Solution Combustion Synthesized Nanocrystalline Y3Al5O12:Eu3+ Phosphors. Current Nanoscience, 2013.
[34] 王素梅. Controlled performance of an organic transistor memory device with an ultrathin LiF blocking layer. RSC Advance, 2012.
[35] 王素梅. Controllable nanostructure and optical properties of ZrO2 thin films by glancing angle deposition. Appl Phys A : materials science and processing, 2012.
[36] 王素梅. Eco-friendly, low-temperature solution production of oxide thin films for high-performance transistors via infrared irradiation of chloride precursors. Ceramics International, 45, 9829, 2019.
[37] 龚红宇 , 王素梅 and 张倩. High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process. Curent Apply Physics, 19, 174, 2019.
[38] 龚红宇 and 王素梅. High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process. Current Applied Physics, 2018.
[39] 王素梅 and Xia, Wenwen. Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors. Ceramics International, 44, 9125, 2018.
[40] 李爱民 , 孙康宁 , 王素梅 and 孙晓宁. Thermoelectric properties of CNTs/Mn0.7Zn0.3Fe2O4 composite fabricated by spark plasma sintering. Materials Research Express, 2016.
[41] 龚红宇 and 王素梅. High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process. Current Applied Physics, 2018.
[42] 李爱民 , 孙康宁 , 王素梅 and 孙晓宁. Thermoelectric properties of CNTs/Mn0.7Zn0.3Fe2O4 composite fabricated by spark plasma sintering. Materials Research Express, 2016.
[43] 王素梅 and Xia, Wenwen. Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors. Ceramics International, 44, 9125, 2018.
[44] 王素梅 and Xia, Guodong. High-Mobility IGZO TFTs by Infrared Radiation Activated Low-Temperature Solution Process. IEEE Electron Device Letters, 39, 1868, 2018.
[45] 王素梅. Effect of the second phase on grain refinement of 2A12 aluminum alloy by ECA pressing. cailiao kexue yu gongyi, v 15, 115, 2014.

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