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Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair

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  • Affiliation of Author(s):信息科学与工程学院

  • Journal:IEEE Electron Device Letters

  • First Author:李晓鹏

  • Document Code:B7387508BC04489DA41FA8F6DF9895B9

  • Issue:44（8）

  • Number of Words:3

  • Translation or Not:no

  • Date of Publication:2023-08-01

  • Date of Publication:2023-08-01
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