Paper Publications

• [1]  . Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs.  MICROMACHINES,  16,  2025. 
• [2]  . Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory.  advanced science,  2025. 
• [3]  . Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1？xO2 ferroelectric film.  SCIENCE CHINA-Information Sciences,  68,  2025. 
• [4]  李晓鹏. Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films.  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,  2025. 
• [5]  李晓鹏. Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations.  IEEE Transactions on Electron Devices,  71,  5361-5366, 2024. 
• [6]  . Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing.  APPLIED PHYSICS LETTERS,  125,  2024. 
• [7]  台路. Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles).  IEEE Transactions on Electron Devices,  1-4, 2024. 
• [8]  李晓鹏. In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms.  IEEE Transactions on Electron Devices,  2024. 
• [9]  程永豪. First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications.  ACS Applied Electronic Materials,  2025. 
• [10]  桑鹏鹏. Toward high-performance monolayer graphdiyne transistor: Strain engineering matters.  Applied Surface Science,  2021. 
• [11]  桑鹏鹏. Van der Waals Heterostructure Contact Strategy for Barrier-Free 2D Complementary Transistors.  Advanced functional materials,  2024. 
• [12]  桑鹏鹏. A Computational Study on Electrical Contacts in Monolayer hhk-Si Field-Effect Transistors.  IEEE Transactions on Electron Devices,  2025. 
• [13]  桑鹏鹏. an der Waals heterostructure contact strategy for barrier-free 2D complementary transistors.  Advanced Functional Materials,  2024. 
• [14]  窦小禹. Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation.  APPLIED PHYSICS LETTERS,  124,  2024. 
• [15]  汪倩文. P-type cold-source field-effect transistors with TcX2 and ReX2 (X= S, Se) cold source electrodes: A computational study.  Chinese Physics B,  2023.