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    A Computational Study on Electrical Contacts in Monolayer hhk-Si Field-Effect Transistors

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    • Institution:信息科学与工程学院

    • Title of Paper:A Computational Study on Electrical Contacts in Monolayer hhk-Si Field-Effect Transistors

    • Journal:IEEE Transactions on Electron Devices

    • First Author:桑鹏鹏

    • Document Code:E704516EE1B3460ABB9627618F877FB2

    • Issue:72

    • Number of Words:4000

    • Translation or Not:No

    • Date of Publication:2025-01

    • Release Time:2025-09-30
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