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Institution:集成电路学院
Title of Paper:High-Performance InGaZnO-Based ReRAMs
Journal:IEEE Transactions on Electron Devices
First Author:马鹏飞
All the Authors:辛倩,Li Yuxiang,Song A M,王一鸣
Document Code:30A3D463D46B446FAF932289DEB289FE
Volume:66
Issue:6
Page Number:2600
Number of Words:4
Translation or Not:No
Date of Publication:2019-06
Release Time:2019-10-24