【1】殷雪梅.Electrolyte-Gated Amorphous IGZO Transistors with Extended Gates for Prostate-Specific Antigen DetectionLAB ON A CHIP,2024.

【2】董世林.Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potential. Physical chemistry chemical physics, 24:12837-12848,2022.

【3】郑帅英.Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT. NANOTECHNOLOGY, 35:155203,2024.

【4】郑帅英.Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT. NANOTECHNOLOGY, 35,2024.

【5】王名扬.Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatment. applied surface science, 638,2023.

【6】.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate DimensionsIEEE Transactions on Electron Devices:1377,2018.

【7】杨华荣.Efficient Suppression of Persistent Photoconductivity in β-Ga2O3-Based Photodetectors with Square Nanopore Arrays. ACS Applied Materials & Interfaces, 15:32561,2023.

【8】王珣珣.Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction. IEEE Electron Device Letters, 43:44-47,2022.

【9】纪兴启.Amorphous Ga2O3 Thin-Film Phototransistors for Imaging and Logic IllustrationIEEE Electron Device Letters,2023.

【10】纪兴启.Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,JOURNAL OF ALLOYS AND COMPOUNDS ,2023.

【11】纪兴启.High-Performance Thin Film Transistors with Sputtered IGZO/Ga2O3 HeterojunctionIEEE Transactions on Electron Devices,2022.

【12】颜世琪.Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surfaceAPPLIED SURFACE SCIENCE,2023.

【13】林晓昱.High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized AlxOyIEEE Transactions on Electron Devices:537,2022.

【14】林晓昱.Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectricsSemiconductor Science and Technology:35023,2023.

【15】高春禹.Temperature uniformity analysis and multi-objective optimization of a small-scale variable density alternating obliquely truncated microchannelTHERMAL SCIENCE AND ENGINEERING PROGRESS,2023.

【16】张嘉炜.High performance Schottky diodes based on indium-gallium-zinc-oxide. Journal of Vacuum Science & Technology A, 34,2016.

【17】张翼飞.Tunable Surface Plasmon Polaritons with Monolithic Schottky DiodesACS Applied Electronic Materials:2124,2019.

【18】葛磊.Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12,2022.

【19】林雨.Electrical control of the optical dielectric properties of PEDOT:PSS thin films. Optical materials, 108,2020.

【20】ZHANG Jiawei.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. NATURE COMMUNICATIONS, 6:7561,2015.

【21】ZHANG Jiawei.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied physics letters, 107,2015.

【22】Jiawei Zhang.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics. Applied Physics Letters, 108:263503,2016.

【23】Ma, Xiaochen.A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors. Scientific Reports, 7,2017.

【24】Zhang, Jiawei.High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials, 10,2017.

【25】李云鹏.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power. Scientific Reports, 6:36183,2016.

【26】严林龙.High performance InGaZnO-based Schottky diodes fabricated at room temperaturePhysica Status Solidi C,2015.

【27】Nakayama, Yasuo.Ultraviolet Photoelectron Spectroscopy (UPS) I: Band Dispersion Measurements of Insulating Organic Single Crystals. ELECTRONIC PROCESSES IN ORGANIC ELECTRONICS: BRIDGING NANOSTRUCTURE, ELECTRONIC STATES AND DEVICE PROPERTIES, 209:11-26,2015.

【28】Wang, Qi.Picene thin films on metal surfaces: Impact of molecular shape on interfacial coupling. Physica Status Solidi: Rapid Research Letters, 11,2017.

【29】陈大正.Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate. SCIENCE CHINA-MATERIALS, 65:795,2022.

【30】王珣珣.Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction. IEEE Electron Device Letters, 43:44,2022.

【31】董世林.Interfacial thermal transport of graphene/beta-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potentialPhys. Chem. Chem. Phys。,2022.

【32】李玲.沟道层带尾态密度和厚度对 ａ － ＩＧＺＯ 薄膜晶体管 特性影响的数值仿真《微电子学与计算机》,2022.

【33】袁玉卓.Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors. IEEE Electron Device Letters, 42:1010,2021.

【34】林雨.Electrically Switchable and Flexible Color Displays Based on All-Dielectric Nanogratings. ACS Applied Nano Materials, 4:7182,2021.

【35】颜世琪.High-Performance Thin-Film IGZO Schottky Diodes With Sputtered PdOx Anode. IEEE Transactions on Electron Devices, 68:4444,2021.

【36】马鹏飞.Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35,2020.

【37】李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24:208,2018.

【38】杜路路.High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Transactions on Electron Devices, 40:4326,2018.

【39】张嘉炜.Extremely high-gain source-gated transistors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 116:4843,2019.

【40】林雨.Electrical control of the optical dielectric properties of PEDOT:PSS thin films. Optical materials, 108,2020.

【41】Mao, Huiwu.MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices. Advanced Electronic Materials, 6,2020.

【42】袁玉卓.Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO. IEEE Electron Device Letters, 42:62,2021.

【43】屈云秀.Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses. Semiconductor Science and Technology, 26,2018.

【44】李云鹏.Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power. Applied Physics Letters, 27,2018.

【45】李云鹏.Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays. IEEE Transactions on Electron Devices, 66:950,2019.

【46】袁玉卓.SnOX-Based mu W-Power Dual-Gate Ion-Sensitive Thin-Film Transistors With Linear Dependence of pH Values on Drain Current. IEEE Electron Device Letters, 42:54,2021.

【47】凌昊天.Spoof surface plasmon polariton band-stop filter with single-loop split ring resonators. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 30,2020.

【48】杨博文.Molecular dynamic simulation of thermal transport in monolayer C3BxN1-x alloy. Nanotcchnology, 31,2020.

【49】王鑫煜.Thermal and flow characterization in nanochannels with tunable surface wettability: A comprehensive molecular dynamics study. NUMERICAL HEAT TRANSFER PART A-APPLICATIONS, 78:231,2020.

【50】马鹏飞.Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35,2020.

【51】王鑫煜, 曹炳阳 and 辛公明.Molecular Dynamic Simulation of Thermal Transport in Monolayer C3BxN1-x Alloy. NANOTECHNOLOGY, 31,2020.

【52】辛倩, 王一鸣, 周莉, 王卿璞, 宋爱民 and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity. IEEE Electron Device Letters, 32:516,2018.

【53】徐明升, 王卿璞, 辛倩, 宋爱民 and 杜路路.Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte. IEEE Electron Device Letters, 31:1334,2018.

【54】张翼飞, 宋爱民, 时彦朋, 王一鸣, 冯华钰, 辛倩 and 王卿璞.Tunable Surface Plasmon Polaritons with Monolithic Schottky DiodesACS Applied Electronic Materials,2019.

【55】贾志泰, 徐明升, 辛倩, 陶绪堂, 宋爱民 and 刘雅璇.Ga<inf>2</inf>O<inf>3</inf> Field-Effect-Transistor-Based Solar-Blind Photodetector with Fast Response and High Photo-to-Dark Current Ratio. IEEE Electron Device Letters, 32:1696,2018.

【56】辛倩.Seleno groups control the energy-level alignment between conjugated organic molecules and metals. Journal of Chemical Physics, 140:014705,2014.

【57】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole-Phonon CouplingThe Journal of Physical Chemistry C,2016.

【58】辛倩.Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode. Applied Physics Letters, 106:113506,2015.

【59】辛倩.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied Physics Letters, 107:093505,2015.

【60】辛倩.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. Nature Communications, 6:7561,2015.

【61】辛倩.High performance InGaZnO-based Schottky diodes fabricated at room temperature. Physica Status Solidi C, 13:618,2016.

【62】辛倩 and 宋爱民.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics. Applied Physics Letters, 108:263503,2016.

【63】辛倩.Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes. Thin Solid Films, 616:569,2016.

【64】辛倩.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power. Scientific Reports, 6:36183,2016.

【65】辛倩.High performance Schottky diodes based on indium-gallium-zinc-oxide. Journal of Vacuum Science & Technology A, 34:04C101,2016.

【66】辛倩, 李玉香, 宋爱民 and 马鹏飞.Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34:105004,2019.

【67】辛倩, 宋爱民, 王一鸣, 时彦朋 and 张翼飞.Schottky-barrier thin-film transistors based on HfO2-capped InSeApplied physics letters,2019.

【68】辛倩, 陶绪堂, 宋爱民, 徐明升, 穆文祥, 贾志泰, 王鑫煜 and 辛公明.Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrodeSemiconductor Science and Technology,2019.

【69】宋爱民, 杨再兴, 尹延学, 辛倩 and 韩明明.Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectorsJOURNAL OF MATERIALS CHEMISTRY C,2018.

【70】徐明升, 王卿璞, 宋爱民, 辛倩 and 杜路路.High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Transactions on Electron Devices, 65:4326,2018.

【71】辛倩, 李玉香, 宋爱民 and 马鹏飞.Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric. Applied physics letters, 113,2018.

【72】徐明升, 王卿璞, 辛倩, 宋爱民 and 杜路路.Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte. IEEE Electron Device Letters, 39:1334,2018.

【73】王一鸣, 辛倩, 徐明升, 陈秀芳, 徐现刚, 冯先进, 宋爱民 and 朱庚昌.GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric. Semiconductor Science and Technology, 33,2018.

【74】王卿璞, 宋爱民, 辛倩 and 屈云秀.Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses. Semiconductor Science and Technology, 33,2018.

【75】宋爱民, 王一鸣, 王卿璞, 周莉, 辛倩 and 杨进.All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory. IEEE Electron Device Letters, 39:1876,2018.

【76】王一鸣, 辛倩, 宋爱民, 时彦朋, 李玉香 and 王卿璞.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions. IEEE Transactions on Electron Devices, 65:1377,2018.

【77】辛倩, 周莉, 杨再兴, 林兆军, 王卿璞, 宋爱民 and 李云鹏.Ambipolar SnOx thin-film transistors achieved at high sputtering power. APPLIED PHYSICS LETTERS, 112,2018.

【78】王一鸣, 杨再兴, 辛倩, 宋爱民 and 梁广大.Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33,2018.

【79】宋爱民, 王一鸣, 林兆军, 周莉, 辛倩 and 李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【80】辛倩, 王一鸣, 周莉, 王卿璞, 宋爱民 and 杨进.Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity. IEEE Electron Device Letters, 39:516,2018.

【81】辛倩, 王蕾 and 陶绪堂.Synthesis, structure and two-photon absorption properties of a new multi-branched compound, 1,2,4,5-tetrakis(4-pyridylvinyl)benzene. The Journal of Solid State Chemistry, 177:4293,2004.

【82】辛倩, 王卿璞, 宋爱民 and 杜路路.Effects of substrate and anode metal annealing on InGaZnO Schottky diodes. Applied physics letters, 110,2017.

【83】王一鸣, 王卿璞, 辛倩, 韩琳, 宋爱民 and 王汉斌.A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching. IEEE Transactions on Nanotechnology, 16:290,2017.

【84】辛倩 and 陶绪堂.Fluorene-based Troger's base analogues: potential electroluminescent materials. Organic electronics, 9:1076,2008.

【85】辛倩 and 陶绪堂.Size-dependent properties of highly fluorescent Tro ？ger’s base Nanocrystals. 《人工晶体学报》, 39:99,2010.

【86】辛倩 and 宋爱民.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics. Applied physics letters, 108:263503,2016.

【87】辛倩 and 宋爱民.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power. scientific reports, 6:36183,2016.

【88】辛倩.Seleno groups control the energy-level alignment between conjugated organic molecules and metals. Journal of Chemical Physics, 140:014705,2014.

【89】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole-Phonon CouplingThe Journal of Physical Chemistry C,2016.

【90】辛倩.Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode. Applied Physics Letters, 106:113506,2015.

【91】辛倩.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied Physics Letters, 107:093505,2015.

【92】辛倩.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. Nature Communications, 6:7561,2015.

【93】辛倩.High performance InGaZnO-based Schottky diodes fabricated at room temperature. Physica Status Solidi C, 13:618,2016.

【94】宋爱民 and 辛倩.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics. Applied Physics Letters, 108:263503,2016.

【95】辛倩.Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes. Thin Solid Films, 616:569,2016.

【96】辛倩.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power. Scientific Reports, 6:36183,2016.

【97】辛倩 and 宋爱民.Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode. APPLIED PHYSICS LETTERS, 106:113506,2015.

【98】辛倩 and 陶绪堂.Synthesis, structure and packing properties of three Troger's base analogues containing substituted fluorine units. CrystEngComm, 10:1204,2008.

【99】辛倩 and 宋爱民.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. NATURE COMMUNICATIONS, 6:7561-1,2015.

【100】辛倩 and 宋爱民.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied physics letters, 107:093505-1,2015.

【101】刘杰, 宋爱民 and 辛倩.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristicsApplied physics letters,2016.

【102】辛倩 and 陶绪堂.Lamda-shaped optoelectronic materials based on Tr？ger's base. SCIENCE CHINA Chemistry, 54:587,2011.

【103】辛倩 and 宋爱民.High performance Schottky diodes based on indium-gallium-zinc-oxideJournal of Vacuum Science & Technology A,2016.

【104】辛倩 and 宋爱民.High performance InGaZnO-based Schottky diodes fabricated at room temperature. Physica Status Solidi C, 13:618,2016.

【105】辛倩 and 宋爱民.Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes. Thin Solid Films, 616:569,2016.

【106】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole？Phonon Coupling. JOURNAL OF PHYSICAL CHEMISTRY C, 120:14568,2016.

【107】辛倩.Seleno groups control the energy-level alignment between conjugated organic molecules and metals. THE JOURNAL OF CHEMICAL PHYSICS, 140:014705-1,2014.

【108】辛倩 and 陶绪堂.Novel multi-branched organic compounds with enhanced two-photon absorption benefiting from the strong electronic couplingChemical Physics Letters,,2005.

【109】辛倩 and 陶绪堂.Structure and properties of multibranched isophorone-based materials for organic light-emitting diodesChemical Physics Letters,2006.

【110】辛倩 and 陶绪堂.Three-dimensional metal-organic network architecture with large π-conjugated indolocarbazole derivative: synthesis, supramolecular structure, and hightly enhanced fluorescence. Crystal growth & Design, 8:259,2007.

【111】辛倩.Impact of alkyl side chains at self-assembly, electronic structure and charge arrangement in sexithiophene thin films. Organic electronics, 12:903,2011.

【112】辛倩.Charge reorganization energy and small polar on binding energy of rubrene films by ultraviolet photoelectron spectroscopy. Advanced Materials, 24:901,2012.

【113】辛倩.Highest-occupied-molecular-orbital band dispersion of rubrene single crystals as observed by angle-resolved ultraviolet photoelectron spectroscopy. Physics Review Letters, 104:156401-1,2010.

【114】辛倩.Impact of Nitrogen substitution and molecular orientation on the energy-level alignment of heteroacene films. The Journal of Physics Chemistry C, 115:15502,2011.

【115】辛倩.Accessing surface Brillouin zone and band structure of picene single crystals. Physics Review Letters, 108:226401-1,2012.

【116】陶绪堂, 宋爱民, 辛倩, 徐明升, 穆文祥, 王鑫煜, 辛公明, 贾志泰 and 杜路路.High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact. IEEE Electron Device Letters, 40:451,2019.

【117】贾志泰, 徐明升, 辛倩, 陶绪堂, 宋爱民 and 刘雅璇.Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio. IEEE Electron Device Letters, 39:1696,2018.

【118】辛倩, 王一鸣, 周莉, 王卿璞, 宋爱民 and 袁玉卓.Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption. IEEE Electron Device Letters, 39:1676,2018.

【119】王一鸣, 辛倩, 李玉香, 宋爱民 and 马鹏飞.Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric. Applied physics letters, 112,2018.

【120】辛倩, 李玉香, 宋爱民 and 马鹏飞.Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device. JOURNAL OF ALLOYS AND COMPOUNDS , 792:543,2019.

【121】王一鸣, 辛倩, 李玉香, 宋爱民 and 马鹏飞.High-Performance InGaZnO-Based ReRAMs. IEEE Transactions on Electron Devices, 66:2600,2019.

【122】辛倩.High performance Schottky diodes based on indium-gallium-zinc-oxide. Journal of Vacuum Science & Technology A, 34:04C101,2016.

【123】宋爱民, 王一鸣, 时彦朋, 张翼飞 and 辛倩.Schottky-barrier thin-film transistors based on HfO2-capped InSeApplied physics letters,2019.

【124】陶绪堂, 宋爱民, 徐明升, 穆文祥, 贾志泰, 王鑫煜, 辛公明 and 辛倩.Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrodeSemiconductor Science and Technology,2019.

【125】辛倩.Seleno groups control the energy-level alignment between conjugated organic molecules and metals140:014705,2014.

【126】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole-Phonon Coupling,2016.

【127】辛倩.Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode106:113506,2015.

【128】辛倩.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes107:093505,2015.

【129】辛倩.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz6:7561,2015.

【130】辛倩.High performance InGaZnO-based Schottky diodes fabricated at room temperature13:618,2016.

【131】辛倩.Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes616:569,2016.

【132】辛倩.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power6:36183,2016.

【133】宋爱民, 辛倩 and 刘杰.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristicsApplied physics letters,2016.

【134】辛倩.High performance Schottky diodes based on indium-gallium-zinc-oxide34:04C101,2016.

【135】宋爱民, 王一鸣, 时彦朋, 张翼飞 and 辛倩.Schottky-barrier thin-film transistors based on HfO2-capped InSeApplied physics letters,2019.

【136】辛倩, 李玉香, 宋爱民 and 马鹏飞.Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34:105004,2019.

【137】宋爱民, 杨再兴, 尹延学, 辛倩 and 韩明明.Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectorsJOURNAL OF MATERIALS CHEMISTRY C,2018.

【138】陶绪堂, 宋爱民, 辛倩, 徐明升, 穆文祥, 王鑫煜, 辛公明, 贾志泰 and 杜路路.High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact. IEEE Electron Device Letters, 40:451,2019.

【139】陶绪堂, 宋爱民, 徐明升, 穆文祥, 贾志泰, 王鑫煜, 辛公明 and 辛倩.Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrodeSemiconductor Science and Technology,2019.

【140】辛倩, 王卿璞, 宋爱民 and 杜路路.Effects of substrate and anode metal annealing on InGaZnO Schottky diodes. Applied physics letters, 110,2017.

【141】王一鸣, 王卿璞, 辛倩, 韩琳, 宋爱民 and 王汉斌.A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching. IEEE Transactions on Nanotechnology, 16:290,2017.

【142】宋爱民, 杨再兴, 尹延学, 辛倩 and 韩明明.Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectorsJOURNAL OF MATERIALS CHEMISTRY C,2018.

【143】王一鸣, 辛倩, 徐明升, 陈秀芳, 徐现刚, 冯先进, 宋爱民 and 朱庚昌.GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric. Semiconductor Science and Technology, 33,2018.

【144】辛倩, 李玉香, 宋爱民 and 马鹏飞.Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device. JOURNAL OF ALLOYS AND COMPOUNDS Journal, 792:543,2019.

【145】王一鸣, 辛倩, 李玉香, 宋爱民 and 马鹏飞.High-Performance InGaZnO-Based ReRAMs. IEEE Transactions on Electron Devices, 66:2600,2019.

【146】宋爱民, 王一鸣, 林兆军, 周莉, 辛倩 and 李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【147】宋爱民, 王一鸣, 王卿璞, 周莉, 辛倩 and 杨进.All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory. IEEE Electron Device Letters, 39:1876,2018.

【148】贾志泰, 徐明升, 辛倩, 陶绪堂, 宋爱民 and 刘雅璇.Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio. IEEE Electron Device Letters, 39:1696,2018.

【149】王卿璞, 宋爱民, 辛倩 and 屈云秀.Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses. Semiconductor Science and Technology, 33,2018.

【150】徐明升, 王卿璞, 宋爱民, 辛倩 and 杜路路.High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Transactions on Electron Devices, 65:4326,2018.

【151】徐明升, 王卿璞, 辛倩, 宋爱民 and 杜路路.Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte. IEEE Electron Device Letters, 39:1334,2018.

【152】王一鸣, 辛倩, 李玉香, 宋爱民 and 马鹏飞.Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric. Applied physics letters, 112,2018.

【153】辛倩, 李玉香, 宋爱民 and 马鹏飞.Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric. Applied physics letters, 113,2018.

【154】杨再兴, 辛倩, 宋爱民 and 梁广大.Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33,2018.

【155】辛倩, 宋爱民 and 刘杰.Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristicsApplied physics letters,2016.

【156】辛倩.Seleno groups control the energy-level alignment between conjugated organic molecules and metals140:014705,2014.

【157】辛倩.Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode106:113506,2015.

【158】辛倩.Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes107:093505,2015.

【159】辛倩.High performance Schottky diodes based on indium-gallium-zinc-oxide34:04C101,2016.

【160】辛倩.High performance InGaZnO-based Schottky diodes fabricated at room temperature13:618,2016.

【161】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole-Phonon Coupling,2016.

【162】辛倩.Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes616:569,2016.

【163】辛倩.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power6:36183,2016.

【164】辛倩.Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz6:7561,2015.

【165】王蕾, 陶绪堂 and 辛倩.Synthesis, structure and two-photon absorption properties of a new multi-branched compound, 1,2,4,5-tetrakis(4-pyridylvinyl)benzene. The Journal of Solid State Chemistry, 177:4293,2004.

【166】陶绪堂 and 辛倩.Novel multi-branched organic compounds with enhanced two-photon absorption benefiting from the strong electronic couplingChemical Physics Letters,,2005.

【167】陶绪堂 and 辛倩.Structure and properties of multibranched isophorone-based materials for organic light-emitting diodesChemical Physics Letters,2006.

【168】陶绪堂 and 辛倩.Three-dimensional metal-organic network architecture with large π-conjugated indolocarbazole derivative: synthesis, supramolecular structure, and hightly enhanced fluorescence. Crystal growth & Design, 8:259,2007.

【169】陶绪堂 and 辛倩.Size-dependent properties of highly fluorescent Tro ？ger’s base Nanocrystals. 《人工晶体学报》, 39:99,2010.

【170】陶绪堂 and 辛倩.Lamda-shaped optoelectronic materials based on Tr？ger's base. SCIENCE CHINA Chemistry, 54:587,2011.

【171】辛倩.Transient Monolayer Structure of Rubrene on Graphite: Impact on Hole？Phonon Coupling. JOURNAL OF PHYSICAL CHEMISTRY C, 120:14568,2016.

【172】辛倩.Highest-occupied-molecular-orbital band dispersion of rubrene single crystals as observed by angle-resolved ultraviolet photoelectron spectroscopy. Physics Review Letters, 104:156401-1,2010.

【173】辛倩.Impact of alkyl side chains at self-assembly, electronic structure and charge arrangement in sexithiophene thin films. Organic electronics, 12:903,2011.

【174】辛倩.Charge reorganization energy and small polar on binding energy of rubrene films by ultraviolet photoelectron spectroscopy. Advanced Materials, 24:901,2012.

【175】陶绪堂 and 辛倩.Synthesis, structure and packing properties of three Troger's base analogues containing substituted fluorine units. CrystEngComm, 10:1204,2008.

【176】陶绪堂 and 辛倩.Fluorene-based Troger's base analogues: potential electroluminescent materials. Organic electronics, 9:1076,2008.

【177】辛倩.Impact of Nitrogen substitution and molecular orientation on the energy-level alignment of heteroacene films. The Journal of Physics Chemistry C, 115:15502,2011.

【178】辛倩.Accessing surface Brillouin zone and band structure of picene single crystals. Physics Review Letters, 108:226401-1,2012.

【179】宋爱民 and 辛倩.Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode. Applied physics letters, 106:113506-1,2015.

【180】辛倩, 宋爱民, 时彦朋, 李玉香, 王卿璞 and 王一鸣.Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions. IEEE Transactions on Electron Devices, 65:1377,2018.

【181】辛倩, 宋爱民, 尹延学 and 杨再兴.Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectorsJOURNAL OF MATERIALS CHEMISTRY C,2018.

【182】辛倩, 周莉, 杨再兴, 林兆军, 王卿璞, 宋爱民 and 李云鹏.Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112,2018.

【1】山东大学青年教师教学比赛