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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
Affiliation of Author(s):集成电路学院
Journal:IEEE Electron Device Letters
All the Authors:xinqian,Yiming Wang,Zhou Li,wangqingpu,Song A M
First Author:杨进
Document Code:380A7EA0D0E84282A8B90E41FA3EADCD
Volume:39
Issue:4
Page Number:516
Number of Words:4
Translation or Not:no
Date of Publication:2018-03-22