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Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics
Affiliation of Author(s):集成电路学院
Journal:Semiconductor Science and Technology
First Author:林晓昱
Document Code:D140F3F28B5E40BDBCD2400A9D2DFD08
Issue:38
Page Number:35023
Number of Words:3500
Translation or Not:no
Date of Publication:2023-02-17