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Institution:集成电路学院
Title of Paper:Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,
Journal:JOURNAL OF ALLOYS AND COMPOUNDS
First Author:纪兴启
Document Code:C5F7BC4F612E4B1AA88C776E63A81C56
Issue:Vol. 933
Number of Words:8
Translation or Not:No
Date of Publication:2023-01
Release Time:2023-05-24